Genius：三维并行器件仿真软件
产品介绍 | 应用算例下载
传统的 TCAD 器件仿真时间周期过长，效率低下，一直是很多用户的困扰。新一代三维并行器件仿真软件，Genius，可以帮助客户完美的解决这些问题。Genius 是珂晶达引以为豪的产品，这款软件内嵌先进的并行计算技术，使得仿真规模大，效率高。Genius 是跨越 10-晶体管壁垒 的商业 TCAD 仿真软件，它使得对一些电路单元的仿真变得可能，比如反相器、6管 SRAM、锁存器和触发器，并且仿真时间可以降低一个数量级，极大的提高了仿真效率。
Genius 采用全新的设计方法，在这点上超越目前市场上的其他 TCAD 软件。它具有并行、兼容性、可扩展性的特点，这些先进的理念也是软件设计的初衷。除此之外，Genius 程序模块的搭建还采用了先进的数值模拟技术和软件开发平台。
Genius 的并行计算方法可以大幅度减少仿真时间，从时间周期上允许对超大的单个器件、或者包含数个器件的电路模块进行仿真，消除使用其他的 TCAD 软件处理这些问题时遇到的的困难。
Genius 三维 CMOS 反相器仿真时间及并行加速。
主要特点
- 漂移-扩散模型
- 晶格热模型
- 能量平衡模型
- 直流、交流和瞬时仿真模型
- 电路/器件混合仿真模型
- 多达 30 多种材料的材料库
- 宽范围载流子模型
- 冲击离化模型
- 带-带隧穿模型
- 载流子缺陷捕获模型
- 霍尔效应
- 三维光线追踪算法
- 二维有限元光线算法
- 三维总剂量效应模型
- 基于 GDSII 版图的器件模型构建
- 可与其他主流 TCAD 仿真数据交互
举例：某六管 SRAM
建模和网格：
仿真结果（某时刻的电势分布）：
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WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
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What's New
- VisualTCAD 2024.10 released [2024-11-04]
- VisualTCAD 2024.06 released [2024-07-18]
- VisualTCAD 2024.03 released [2024-04-09]
- VisualTCAD 2024.02 released [2024-03-05]
- VisualTCAD 2023.12 released [2024-01-17]
- VisualTCAD 2023.11 released [2023-12-07]
- MozzTCAD 2023.10 released [2023-11-06]
- VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
- VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
- VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
- VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
- Vspice 2.2 released [2019-4-15]
- Vspice 2.0 released [2018-10-20]
- VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
- Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
- Vspice 1.0 released [2017-4-15]
- CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
- VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
- Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]
- VisualTCAD 1.8.0-1 released with a new product for space radiation environment and effects analysis [2014-3-22]
- Cogenda presented a fully-physical simulation framework for single-event effects in semiconductor devices at RADECS 2012 [2012-9-28]
- Cogenda to present the super large TCAD device simulation at SISPAD 2012 [2012-6-18]
- Technical: Half-implicit solver for million-mesh-node TCAD device/circuit simulation [2012-6-18]
- VisualTCAD 1.7.4 released [2012-6-3]
- VisualTCAD 1.7.3 released [2012-1-1]
- VisualTCAD 1.7.2-5 released [2011-09-29]
- Cogenda to present MOSFET inverse-modeling technology at SISPAD 2011 and the companion workshop. [2011-07-17]
- Technical: Crossing the 10-transistor barrier of device simulation. [2011-07-12]
- New product: VisualParticle/GSeat for radiation effect analysis. [2011-07-01]
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CMOS Logic Gates
Want to simulate small logic circuit cells in 3D? Genius allows you to simulate a complete cell in a single TCAD model.
Or if you want to simulate it the traditional way, you can still perform a mixed-mode circuit and device simulation using SPICE.