MozzTCAD 2023.10

2023.11.06

Mozz Device Simulator

• New features:

  • Add new compound semiconductor material InGaAsP.
  • Add new material LiNbO3 with an-isotropic dielectric coefficient.
  • Add PWL support for vsource and isource.
  • Support small signal AC sweep for optical generation.
  • Improved initialize speed of distance-to-surface.

• Bug fixes:

  • Fixed dopant naming for SiC material.
  • Fixed convergence test of MIX solver.
  • Avoid crash when stress PMI not exist.

Mozz Process Simulator

• New features:
  • SiGe Diffusion model: mole-fraction parameter interpolation, coupling stress and diffusion.
  • More materials supported in diffusion: HfO2, TiNitride, TiSilicide, SiC.
  • Faster dynamic compiling.
  • PAI co-implant model.

Mozz Workbench

• New features:
  • Optimize example applications generation.
  • Optimize the display of project directories when opening and saving projects.
  • Support top the root directory of the project tree.
  • Improve the copy operation in the project tree.
  • Add a running status display for project trees.
  • Support cleaning up non-existent Cell folders and Step input files in projects.
  • Support project reloading.
  • Display a prompt for duplicate file names when adding Flow Steps.
  • Automatically include names when adding steps.
  • When selecting multiple experiments to append value, the new experiment will only be added based on these selected experiments.
  • When adding experiments based on parameter values, locate the parameter nearby for easy editing.
  • Operations under Filters will only take effect within the scope of the Filter.
  • When running a Cell, execute the settings related to dependencies.
  • When using slurm scheduling, no longer generate slurm.sh files.
  • Prompt for occupied files during clean up and perform continuous deletion.
  • Switch the explicit merging of cells in the table.
  • Cell information switching displays runtime, server information, JobID, dependencies, etc. and can be quickly accessed with shortcut keys.
  • Quickly select operations using the selected cell.
  • Quickly select experiment cells.
  • Optimized performance and querying of Cell Explorer text filtering .
  • Cell Explorer supports opening visualization tools for multiple selections with the same format.
  • Cell Explorer remembers the previous location of opened files.
  • Project Explorer/Cell Explorer file system directory displays file list sorting optimization.
  • Cell Explorer supports deleting multiple selected files.
  • Cell Explorer supports displaying file directories.
  • Optimized Visualizer prompts.
  • Supports running visualization scripts after preprocessing, and displaying multiple items in the order selected by cells from left to right and top to bottom.
  • Optimized performance of preprocessing.
  • Preprocessing python expressions supports nesting with @[].
  • Preprocessing macro definitions support parameter passing and multi-line macros.
  • If the tool has modules, the save and load cmd of the command should be added.
  • Preprocessing reference @() supports nesting.
  • Added configurations for empty columns and rows.
  • Added configurations for opening tools in system folders.

Mozz Visual

• New features:
  • Enhanced Plot Sorting and Hiding.
  • Improved Axis Zooming in One-Dimensional Plots.
  • Extended Element Visualization for Scalar and Vector Data.
  • Optimized Calculation Speed for Integration, Maximum, and Minimum Value.

Mozz Structure

• New features:
  • More capability to build and edit the structures.
  • Provide the script macro recording function for main operations. User can load this macro in later use.

Mozz Extract

• New features:
  • Plenty of data operation functions.
  • Several robust optimization algorithm.
  • Binning support of the extracted models.
  • Supports RSM analysis of the extracted spice models.

MozzTCAD 2023.9

2023.10.08

Mozz Device Simulator

• New features:

  • Support floating number with 64/80/128/192/256 bit precision to resolve small current under 1e-30 A.
  • Support pseudo-time method for stabilized avalanche simulation with local feedback theory.
  • Improved Bank-Rose damping for SiC support.
  • Improved DC stepping algorithm.

• Bug fixes:

  • Fixed thermal emit current for Fermi statistic of hetero junction.

Mozz Process Simulator

• New features:
  • More robust structure generation.
  • Optimized analytic implantation table, Co-Implant model, reflection boundary condition.
  • More robust oxidation, new orientation-dependent oxidation speed.
  • Brand new binary-tree mesh generation. Optimized axial, field-dependent and new interfacial strategies are provided.
  • Optimized contact definition.
  • Many convenient functions: point, polygon, mask, profile.
  • Add mobility model for dopant concentration to resistance convention.
  • New diffusion models including Imp2Diff, stream3, moment1, trapsegregation and co-diffusion. Highly customizable formula with dynamic compiling.
  • Stress Models: include thermal expansion, lattice mismatch and intrinsic mismatch.
  • Recipe function to include thermal ramp up and down.

Mozz Workbench

• New features:
  • Support projects management, copy and modify execution of existing projects and cases.
  • Support parameterized experiments and input file management, automate running simulation.
  • Facilitate quick viewing and analysis of simulation data and files.
  • Support scheduling, execution, and monitoring of experimental simulation jobs.
  • Support Python script processing of projects and experimental related simulation operations.
  • Add Split Module to Implementation Block Running.
  • Support copying variables and parameter values in the experiment list.
  • Add properties for experiments, Cell nodes and variables.
  • Support deleting multiple Steps, Modules, and Parameters.
  • Add the Reload operation for Simulation projects.
  • Support saving selected experiments as new projects.
  • Add support for displaying packaged projects in the project tree.
  • Support including experiments in a new Filter.
  • Optimize the performance of Preprocessing and Cell Explorer.
  • Python toolkit integration: pandas, scipy, matplotlib and sklearn.

Mozz Visual

• New features:
  • Enable visualization of one-dimensional and two-dimensional data.
  • Support manipulation and display for three-dimensional data.
  • Facilitate linking and special linking operations for multiple graphics of the same type.
  • Provide functionality for data extraction using Probe.
  • Allow interaction with Python through interactive commands.
  • Enable Cutline and axial Cut Plane operations.
  • Introducing Field Integration Operations.
  • Three-dimensional measurement support.
  • Display information about a selected point on a structure use Probe.
  • Three-dimensional linking capabilities.
  • Support for interactive python commands in a three-dimensional context.
  • Display of two-dimensional and three-dimensional contact data.

Mozz Structure

• New features:
  • Optimize 2D structure editing，Easier generation of line, face, rectangle, circle, polygon.
  • Optimize 3D structure editing，Easier generation of cuboid, cylinder, sphere, cone.
  • Support defining contact.
  • Provide graphical user interface (GUI) and scripting methods for use.

VisualTCAD 2.2

2022.11.01

Genius Device Simulator

• New features:

  • Support stress induced multi-valley mobility model for Si and SiGe material.
  • Support crystal orientation related parameter for mobility models and quantum confinement models.
  • Add Si Schenk SRH-TAT model.
  • AC sweep support trap-detrap effects.
  • Support frequency domain based noise simulation.
  • Support statistical variation model based on IFM.

• Bug fixes:

  • Fixed convergence issue when charging a floating gate.
  • Fixed Surface Trap equilibrium state due to quantum confinement.

VisualTCAD

• New features:

  • Add the in/out display setting interface in the 'draw pseudo color' picture of the 3d Visualization window.
  • Adjust the display method in the material doping picture to make the color transit smoother.

• Bug fixes:

  • In 3d Visualization window, 'draw slice' picture color is not same with the 'draw->pseudo color' picture color.

Genes Process Simulator

• Bug fixes:
  • If the STI area is larger than the initialize area, the extra part isn't deleted.
  • The depo axis cannot be completed, and the deposit polygon function is limited.

CRad

• Various bug fixes

VisualTCAD 2.1-p4

2022.08.24

Genius Device Simulator

• New features:

  • Input deck switch to Tcl.
  • Enhanced support of thermal effect, update DDML2/DDML2QF solver and QDDML2A quantum correction solver.
  • Support Schenk, Hurkx and modified Hurkx BBT model.
  • Support VanOverstraeten and Okuto avalanche model.
  • Optimized simulation speed, the simulation time reduced 10-30%.

• Bug fixes:

  • Fixed Ohmic and Schottky boundary consistence with incomplete ionization.
  • Fixed Schottky boundary thermal equilibrium carrier density consistence with BGN.
  • CONTACT electrode potential now equal to Vapp-Workfunction, compatible with other TCAD tools.

VisualTCAD

• New features:

  • Change the display style in the "field" show mode of the 2D Visual window when field range is set to "out" in the "Struct Property" dialog.
  • Add variable edit dialog in Advance menu of 2D Visual window, which can edit values of scalar, tensor, vector and alias. These variables can be used as CV2D module's default configure.
  • The default colors of cutline changed.
  • The colors of cutline in CV2D now have dark-theme and light-theme, that will change by background color automatically.
  • Change the cutlines default width to 1.5.

• Bug fixes:

  • When inputting space in CV2D Variable Edit window, clicking save button, VisualTCAD will core dump.
  • The cutline white&black color RGB value is contrary to the requirement design in CV2D Variable Edit window.
  • For some kind of .vtu file , the probe data shows nil when using probe tool.
  • CV2D Variable Edit window will close when click enter key in input box of the column head.
  • right click the cutlinecolor-white box in CV2D Variable Edit window should popup the insert row/column options.

VisualTCAD 2.1-p2

2022.06.20

Genius Device Simulator

• New features:

  • Support half FinFET structure to accelerate the simulation.
  • Support Jacobian based extrapolate in DC sweep, which reduced the simulation time.

• Bug fixes:

  • Fixed band gap narrowing mismatch with Fermi statistics.
  • Fixed equilibrium carrier density for recombination in density gradient based quantum solver.
  • Fixed numerical mismatch of Fermi function and inverse Fermi function.
  • Fixed gate thickness threshold for tunneling current, increased to 15 nm.
  • Fixed a parallel-only bug with inconsistent MOS channel element statistics.
  • Support user defined Neumann boundary location.

VisualTCAD 2.1-p1

2022.05.25

Genes Process Simulator

• Various bug fixes

Genius Device Simulator

• Various improvments and bug fixes

VisualTCAD 2.1

2022.05.15

Genes Process Simulator

• New features:
  • New anisotropic etch support.
  • New deposit cmp and deposit fill support.
  • New selective epi support.
• Bug fixes:
  • Fix ion tail distribution with large tilt angles.
  • Fix geometry issue to avoid creating very small regions.

Genius Device Simulator

• New features:
  • New drift-diffusion solver DDML1QF which based on quasi-fermi potential instead of carrier density, which provides more accuracy resolution to off current.
  • New density-gradient based quantum effect solvers for advanced FDSOI and FinFET.
  • New Mobility models for MOS, FDSOI and FinFET.
  • Re-implemented small signal AC sweep solver for both classic and quantum effect drift-diffusion solvers.
  • Add material property support for silicon photonics.
  • Add carrier density export function with Matlab® V5 file format.
• Bug fixes:
  • Improve C1 discontinuity of fermi function, improved convergence when fermi flag is on.
  • Fix convergence criteria when avalanche is on, avoid fake solution at breakdown point.
  • Fix AD error of half implicit solver which may cause current oscillation at large time step.

VisualTCAD

• Bug fixes:
  • The saved file name of Schematic isn't shown on the Circuit Schematic window.
  • The Vector of electrical_field[V/cm] can't be plotted correctly.
  • Application quit automatically when Load from TIF file twice on a new Device Drawing window.
  • The system does not jump to the corresponding page that has been opened when Click "Show IV Data".
  • Fix showing LibGL error while opening VisualTCAD.

VisualTCAD 2.0

2021.10.17

Genes Process Simulator

• Various bug fixes

VisualTCAD

• Various improvments and bug fixes

VisualTCAD 2.0-beta

2021.09.10

Genes Process Simulator

• First release of Genes 2D process simulator

VisualTCAD

• Various improvments and bug fixes

VisualTCAD 1.9.4-3

2020.07.16

Genius Device Simulator

• New features:
  • add material GaO
• Bug fixes:
  • Fix Intel Gold/Platinum CPU floating point bug

VisualTCAD 1.9.4-1

2020.03.01

Genius Device Simulator

• New features:
  • add material InGaP

VisualTCAD 1.9.4-0

2019.12.23

Genius Device Simulator

• New features:
  • Update displacement damage solver, match experiment well
  • Support surface charge in the insulator-insulator interface
  • Update to C++11
  • Misc bug fix

VisualTCAD 1.9.3-18

2019.7.29

Genius Device Simulator

• Bug fixes:
  • fixed ray tracing bug in the condition of multiple runs

VisualTCAD 1.9.3-17

2019.6.25

VisualTCAD

• Bug fixes:
  • fixed cgns display problem introduced in 1.9.3-15

VisualTCAD 1.9.3-15

2019.6.17

Genius Device Simulator

• Bug fixes:
  • fixed data hook uninititialized value problem introduced in 1.9.2
  • fixed a bug when region name exceeds 32 characters
  • fixed vtk io for n and p traps

VisualTCAD 1.9.3-4

2019.3.5

Genius Device Simulator

• New features

  • support Hurkx BTBT model

• Bug fixes:

  • fixed a convergence issue introduced in 1.9.2
  • fixed divide-by-zero error in CdS material

VisualTCAD 1.9.3-1

2018.4.19

Genius Device Simulator

• New features

  • support displacement damage simulation.

• Bug fixes:

  • fix a bug in IV curve export during TID simulation.
  • fix a bug about boundary inconsistency on AC simulation.

VisualTCAD 1.9.3

2018.3.30

Genius Device Simulator

• New features
  • Improve convergence of DC simulation by pseudo time method

VisualTCAD 1.9.2

2017.9.30

Genius Device Simulator

• New features
  • Rewritten TID effect solver which solves fully-coupled equations in all regions in the device.
  • Added support for boundary-layer profile, enabling user to specify trap profile near a boundary or interface.
  • Barrier-lowering effect at Schottky boundary is now calculated self-consistently.
  • Genius can be loaded as external simulator by a higher-level simulator, through Cogenda's SimuHub API, based on the Schur-complement method.
  • Optimized speed and reduce memory usage during simulation structure initialization.
• Miscellaneous bug fixes

Gds2Mesh

• New features
  • Support GDS data-type, in addition to layer number

VisualTCAD

• Bug fixes
  • Fixed E-field rendering in CV2D module

VisualTCAD 1.9.1-5

2017.1.16

Genius Device Simulator

• New features
  • add new material: ITO
  • implement impact-ionization for GaN
  • support TID effect in floating-gate and nano-crystal flash memory
• Misc bug fixes

Gds2Mesh

• Bug fixes
  • fixes a bug in GDSII file reading
  • removes unnecessary system library dependency

VisualTCAD 1.9.1-2

2016.10.9

• Supports Ubuntu16.04LTS
• Supports FlexLM Dongle

Genius Device Simulator

• New features
  • Support for 128-bit quad-precision floating-point numbers in simulation (RHEL7/Ubuntu1404 and later)
• Bug fixes
  • fix bug in importing variables from mesh files
  • improve mesh quality with the Eliminate command

Gds2Mesh

• New features
  • Export structure in STEP format, compatible with FDTD simulator CEM.

VisualTCAD

• Bug fixes and improvements
  • Improve default lighting in 3D visualization
  • Bug fixes in the scripting interface of the 2D visualization CV2D

VisualParticle

• New features
  • New programs: GIon/GProton for accelerated Monte-Carlo integration of events involving elastic and inelastic collision in the device
  • Added support for tau and mu particles

VisualTCAD 1.9.0-2

2016.07.24

Genius Device Simulator

• New features
  • Support for strain-dependent carrier mobility model
  • Boundary command parameter id now supports regular expression
• Bug fixes
  • fix bug in relative convergence criteria
  • fix bug in importing doping species profile with incomplete ionization switched on

VisualTCAD

• Bug fixes and improvements
  • Misc improvements and bug fixes in two dimensional visualization module CV2D

VisualTCAD 1.9.0

2016.01.20

Genius Device Simulator

• New features
  • Total Ionizing Dose (TID) effect solver enhanced, hydrogen center in oxide supported.
  • Oxygen-Rich Polycrystalline Silicon material (widely used in power devices) supported.
• Bug fixes
  • A bug fixed in Single Event Effect (SEE) simulation with cylindrical meshes

VisualTCAD

• New features
  • Re-meshing sup file (generated by process simulator suprem4) supported.
• Bug fixes and improvements
  • Misc improvements and bug fixes in two dimensional visualization module CV2D

Gds2Mesh

• New features
  • Besides of NETGEN, a new mesh generator CTET added. CTET is more stable in geometry operations.

Suprem4

• Bug fixes and improvements
  • bugs fixed, stability improved.

VisualTCAD 1.8.2-9

2015.10.1

Genius Device Simulator

• Bug fixes
  • Fixed miscellaneous bugs in mixed-mode transient simulation.
  • Improved imcomplete ionization model support in SiC materials.

VisualTCAD 1.8.2-8

2015.9.20

Genius Device Simulator

• Bug fixes and improvements
  • Improved convergence of TID solver.
  • Fixed a bug in SiC Masetti mobility model.
  • Fixed numerical round off problem about cylinder mesh generator CY2D and CY3D.
  • Fixed a bug in mixed-mode simulation when "solderpad" boundary is in contact with an insulator material region.
  • Fixed a bug in mixed-mode simulation where two sequential transient simulations suffers from a discontinuity in node voltage.
  • Support export of SPICE device internal state variables along with nodesets, so mixed-mode transient simulation can be restarted from a previously saved state without discontinuity.
  • Improved auto time step control of mixed-mode simulation.

VisualTCAD 1.8.2-6

2015.7.10

Genius Device Simulator

• New features
  • New solver for Total-Ionizing Dose (TID) effect.
  • Support simulation of x-ray pulse (dose-rate) effect.
  • Updated material models: diamond, 4H-SiC, GaAsSb, GaP, etc.
  • New VTK data structure to store field values on both sides of an interface in VTK files.
  • Support trap and other customer field definition in TIF files.
  • Added cylindrical mesh generator for modeling devices such as particle detectors.
  • Import several TIF mesh files at a time.
• Bug fixes
  • Fixed a bug of AC solver. It failed when more than 2 metal regions shares one point.
  • Fixed several bugs in DF-ISE importor.
    • enable element data.
    • determine data type by function name instead of dataset name.
  • Fixed a bug of n_ie calculation with bandgap narrowing effect.
  • Fixed a bug in driving force of carriers with varying affinity, Nc, Nv, Eg, BGN.

Older Releases

Year 2014 and older