In the first tutorial, you will learn how to estimate the SEU rate
of a memory chip in a satellite, in the following steps:
Defining the orbit of the satellite;
Selecting the radiation environment models appropriate for this orbit;
Setting the radiation shielding layers covering the device;
Calculating the SEU rate of the memory chip using the simple IRPP model;
In the second tutorial, you will learn how to estimate the total
ionizing dose (TID) a device is exposed to during the entire mission.
This differs from the SEU calculation in the following steps:
Selecting the statistical fluence model of solar energetic protons;
Calculating the dose-depth curve into the shielding material;
WebTCAD
WebTCAD is the web version of Cogenda's VisualTCAD, a powerful tool of TCAD process and device simulation. It's mainly designed for teaching purpose, aimed at demonstrating/simulating industry-standard semiconductor fabricating and working process. The intuitive graphic UI, step-by-step workflow, and fully featured post process ability make it much easier for university teachers and students to use.
信息更新
VisualTCAD 2.2 3D device simulator Genius support stress induced multi-valley mobility model for Si and SiGe material. [2022-11-01]
VisualTCAD 2.1-p4 Simulation speed of 3D device simulator Genius increased by 10%~30%. [2022-08-24]
VisualTCAD 2.1 3D device simulator Genius support nanometer device such as FDSOI and FinFET. [2022-05-15]
VisualTCAD 2.0 First release of 2D process simulator Genes after years of development. [2021-10-17]
VisualTCAD 1.9.2-3 Comes with revamped Total-Ionizing Dose effect simulation and supports SEE simulation in FDSOI circuits. [2017-10-15]
Cogenda partners with POLYTEDA to distribute PowerDRC/LVS in Asia. [2017-9-15]
CRad's FREE on-line version ForeCAST is open to you now! [2015-12-15]
VisualTCAD 1.8.2-6 Comes with Total-Ionizing Dose effect simulation, among other improvements. [2015-7-10]
Cogenda presented a quantitative analysis on the SEU rate of radiation-hardened SRAM cell due to elastic collisions at NSREC 2014. [2014-7-28]